NTE Electronics, Inc NTE103
- NTE103
- NTE Electronics, Inc
- T-NPN GE-AF PREAMP DR PO
- Transistors - Bipolar (BJT) - Single
- NTE103 Datasheet
- TO-204AA, TO-3
- Bag
- Lead free / RoHS Compliant
- 6172
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number NTE103 |
Category Transistors - Bipolar (BJT) - Single |
Manufacturer NTE Electronics, Inc |
Description T-NPN GE-AF PREAMP DR PO |
Package Bag |
Series - |
Operating Temperature -65°C ~ 100°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-204AA, TO-3 |
Supplier Device Package TO-204AA (TO-3) |
Power - Max 150 mW |
Transistor Type NPN |
Current - Collector (Ic) (Max) 150 mA |
Voltage - Collector Emitter Breakdown (Max) 24 V |
Vce Saturation (Max) @ Ib, Ic 200mV @ 1mA, 24mA |
Current - Collector Cutoff (Max) 5µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 12mA, 150mV |
Frequency - Transition - |
Package_case TO-204AA, TO-3 |
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