ON Semiconductor NTLJS1102PTAG
- NTLJS1102PTAG
- ON Semiconductor
- MOSFET P-CH 8V 3.7A 6WDFN
- Transistors - FETs, MOSFETs - Single
- NTLJS1102PTAG Datasheet
- 6-WDFN Exposed Pad
- Tube
- Lead free / RoHS Compliant
- 3332
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number NTLJS1102PTAG |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer ON Semiconductor |
Description MOSFET P-CH 8V 3.7A 6WDFN |
Package Tube |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 6-WDFN Exposed Pad |
Supplier Device Package 6-WDFN (2x2) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 700mW (Ta) |
FET Type P-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 8 V |
Current - Continuous Drain (Id) @ 25°C 3.7A (Ta) |
Rds On (Max) @ Id, Vgs 36mOhm @ 6.2A, 4.5V |
Vgs(th) (Max) @ Id 720mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 4.5 V |
Input Capacitance (Ciss) (Max) @ Vds 1585 pF @ 4 V |
Vgs (Max) ±6V |
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V |
Package_case 6-WDFN Exposed Pad |
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