ON Semiconductor NVD5C648NLT4G
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- NVD5C648NLT4G
- ON Semiconductor
- MOSFET N-CH 60V 18A/89A DPAK
- Transistors - FETs, MOSFETs - Single
- NVD5C648NLT4G Datasheet
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Tube
-
Lead free / RoHS Compliant - 1236
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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| Part Number NVD5C648NLT4G |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer ON Semiconductor |
| Description MOSFET N-CH 60V 18A/89A DPAK |
| Package Tube |
| Series Automotive, AEC-Q101 |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package DPAK |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 3.1W (Ta), 72W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 60 V |
| Current - Continuous Drain (Id) @ 25°C 18A (Ta), 89A (Tc) |
| Rds On (Max) @ Id, Vgs 4.1mOhm @ 45A, 10V |
| Vgs(th) (Max) @ Id 2.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
| Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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