ON Semiconductor NVH4L022N120M3S
- NVH4L022N120M3S
- ON Semiconductor
- SIC MOS TO247-4L 22MOHM 1200V
- Transistors - FETs, MOSFETs - Single
- NVH4L022N120M3S Datasheet
- TO-247-4
- Tube
- Lead free / RoHS Compliant
- 4286
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number NVH4L022N120M3S |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer ON Semiconductor |
Description SIC MOS TO247-4L 22MOHM 1200V |
Package Tube |
Series - |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-4 |
Supplier Device Package TO-247-4L |
Technology SiC (Silicon Carbide Junction Transistor) |
Power Dissipation (Max) 352W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 1200 V |
Current - Continuous Drain (Id) @ 25°C 68A (Tc) |
Rds On (Max) @ Id, Vgs 30mOhm @ 40A, 18V |
Vgs(th) (Max) @ Id 4.4V @ 20mA |
Gate Charge (Qg) (Max) @ Vgs 151 nC @ 18 V |
Input Capacitance (Ciss) (Max) @ Vds 3175 pF @ 800 V |
Vgs (Max) +22V, -10V |
Drive Voltage (Max Rds On, Min Rds On) 18V |
Package_case TO-247-4 |
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