NVH4L022N120M3S

ON Semiconductor NVH4L022N120M3S

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  • NVH4L022N120M3S
  • ON Semiconductor
  • SIC MOS TO247-4L 22MOHM 1200V
  • Transistors - FETs, MOSFETs - Single
  • NVH4L022N120M3S Datasheet
  • TO-247-4
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4286
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
NVH4L022N120M3S
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
ON Semiconductor
Description
SIC MOS TO247-4L 22MOHM 1200V
Package
Tube
Series
-
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-4
Supplier Device Package
TO-247-4L
Technology
SiC (Silicon Carbide Junction Transistor)
Power Dissipation (Max)
352W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
68A (Tc)
Rds On (Max) @ Id, Vgs
30mOhm @ 40A, 18V
Vgs(th) (Max) @ Id
4.4V @ 20mA
Gate Charge (Qg) (Max) @ Vgs
151 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
3175 pF @ 800 V
Vgs (Max)
+22V, -10V
Drive Voltage (Max Rds On, Min Rds On)
18V
Package_case
TO-247-4

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ON Semiconductor
ON Semiconductor
ON Semiconductor is driving energy efficient innovations, empowering customers to reduce global energy use. The company is a leading supplier of semiconductor-based solutions, offering a comprehensive portfolio of energy efficient power management, analog, ...
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