PDTC115EM,315

NXP Semiconductors(恩智浦半导体) PDTC115EM,315

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  • PDTC115EM,315
  • NXP Semiconductors(恩智浦半导体)
  • NOW NEXPERIA PDTC115EM - SMALL S
  • Transistors - Bipolar (BJT) - Single, Pre-Biased
  • PDTC115EM,315 Datasheet
  • SC-101, SOT-883
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 3735
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
PDTC115EM,315
Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer
NXP Semiconductors(恩智浦半导体)
Description
NOW NEXPERIA PDTC115EM - SMALL S
Package
Bulk
Series
-
Mounting Type
Surface Mount
Package / Case
SC-101, SOT-883
Supplier Device Package
DFN1006-3
Power - Max
250 mW
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
20 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
150mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
1µA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA, 5V
Frequency - Transition
-
Resistor - Base (R1)
100 kOhms
Resistor - Emitter Base (R2)
100 kOhms
Package_case
SC-101, SOT-883

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