NXP USA Inc. PMPB13XNE,115
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- PMPB13XNE,115
- NXP USA Inc.
- MOSFET N-CH 30V 8A DFN2020MD-6
- Transistors - FETs, MOSFETs - Single
- PMPB13XNE,115 Datasheet
- 6-UDFN Exposed Pad
- Bulk
-
Lead free / RoHS Compliant - 4694
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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| Part Number PMPB13XNE,115 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer NXP USA Inc. |
| Description MOSFET N-CH 30V 8A DFN2020MD-6 |
| Package Bulk |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 6-UDFN Exposed Pad |
| Supplier Device Package DFN2020MD-6 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 1.7W (Ta), 12.5W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 30 V |
| Current - Continuous Drain (Id) @ 25°C 8A (Ta) |
| Rds On (Max) @ Id, Vgs 16mOhm @ 8A, 4.5V |
| Vgs(th) (Max) @ Id 900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 36 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds 2.195 pF @ 15 V |
| Vgs (Max) ±12V |
| Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V |
| Package_case 6-UDFN Exposed Pad |
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