NXP USA Inc. BUK9Y59-60E,115
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- BUK9Y59-60E,115
- NXP USA Inc.
- N-CHANNEL 60 V, 59 MILLI OHMS LO
- Transistors - FETs, MOSFETs - Single
- BUK9Y59-60E,115 Datasheet
- SC-100, SOT-669
- Bulk
-
Lead free / RoHS Compliant - 2321
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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| Part Number BUK9Y59-60E,115 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer NXP USA Inc. |
| Description N-CHANNEL 60 V, 59 MILLI OHMS LO |
| Package Bulk |
| Series Automotive, AEC-Q101, TrenchMOS™ |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case SC-100, SOT-669 |
| Supplier Device Package LFPAK56, Power-SO8 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 37W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 60 V |
| Current - Continuous Drain (Id) @ 25°C 16.7A (Tc) |
| Rds On (Max) @ Id, Vgs 52mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id 2.1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs 6.1 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds 715 pF @ 25 V |
| Vgs (Max) ±10V |
| Drive Voltage (Max Rds On, Min Rds On) 5V |
| Package_case SC-100, SOT-669 |
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