PMXB360ENEA

Nexperia USA Inc. PMXB360ENEA

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  • PMXB360ENEA
  • Nexperia USA Inc.
  • MOSFET N-CH 80V 1.1A 3DFN
  • Transistors - FETs, MOSFETs - Single
  • PMXB360ENEA Datasheet
  • 3-XDFN Exposed Pad
  • 3-XDFN Exposed Pad
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 1837
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
PMXB360ENEA
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Nexperia USA Inc.
Description
MOSFET N-CH 80V 1.1A 3DFN
Package
3-XDFN Exposed Pad
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
3-XDFN Exposed Pad
Supplier Device Package
DFN1010D-3
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
400mW (Ta), 6.25W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
80V
Current - Continuous Drain (Id) @ 25°C
1.1A (Ta)
Rds On (Max) @ Id, Vgs
450 mOhm @ 1.1A, 10V
Vgs(th) (Max) @ Id
2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
130pF @ 40V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Max)
±20V
Package_case
3-XDFN Exposed Pad

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+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
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