NXP USA Inc. PSMN2R6-60PSQ127
- PSMN2R6-60PSQ127
- NXP USA Inc.
- MOSFET N-CH 60V 150A TO220AB
- Transistors - FETs, MOSFETs - Single
- PSMN2R6-60PSQ127 Datasheet
- TO-220-3
- Bulk
- Lead free / RoHS Compliant
- 3480
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number PSMN2R6-60PSQ127 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer NXP USA Inc. |
Description MOSFET N-CH 60V 150A TO220AB |
Package Bulk |
Series TrenchMOS™ |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 |
Supplier Device Package TO-220AB |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 326W (Ta) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 60 V |
Current - Continuous Drain (Id) @ 25°C 150A (Ta) |
Rds On (Max) @ Id, Vgs 2.6mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 7629 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) - |
Package_case TO-220-3 |
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Customer reviews
NXP USA Inc.
NXP Semiconductors enables secure connections and infrastructure for a smarter world, advancing solutions that make lives easier, better and safer. As the world leader in secure connectivity solutions for embedded applications, NXP is ...
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