Nexperia USA Inc. PSMN4R3-100ES,127
- PSMN4R3-100ES,127
- Nexperia USA Inc.
- MOSFET N-CH 100V 120A I2PAK
- Transistors - FETs, MOSFETs - Single
- PSMN4R3-100ES,127 Datasheet
- TO-262-3 Long Leads, I²Pak, TO-262AA
- Tube
- Lead free / RoHS Compliant
- 4897
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number PSMN4R3-100ES,127 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Nexperia USA Inc. |
Description MOSFET N-CH 100V 120A I2PAK |
Package Tube |
Series - |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package I2PAK |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 338W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 100 V |
Current - Continuous Drain (Id) @ 25°C 120A (Tc) |
Rds On (Max) @ Id, Vgs 4.3mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 9900 pF @ 50 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case TO-262-3 Long Leads, I²Pak, TO-262AA |
PSMN4R3-100ES,127 Guarantees
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