Rectron USA RMD1N25ES9
- RMD1N25ES9
- Rectron USA
- MOSFET N-CHANNEL 25V 1.1A SOT363
- Transistors - FETs, MOSFETs - Single
- RMD1N25ES9 Datasheet
- 6-TSSOP, SC-88, SOT-363
- Bulk
- Lead free / RoHS Compliant
- 27886
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number RMD1N25ES9 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Rectron USA |
Description MOSFET N-CHANNEL 25V 1.1A SOT363 |
Package Bulk |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package SOT-363 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 800mW (Ta) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 25 V |
Current - Continuous Drain (Id) @ 25°C 1.1A (Ta) |
Rds On (Max) @ Id, Vgs 600mOhm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs - |
Input Capacitance (Ciss) (Max) @ Vds 30 pF @ 10 V |
Vgs (Max) ±12V |
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V |
Package_case 6-TSSOP, SC-88, SOT-363 |
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