RMD1N25ES9

Rectron USA RMD1N25ES9

The picture is for reference only, please refer to the product specification

  • RMD1N25ES9
  • Rectron USA
  • MOSFET N-CHANNEL 25V 1.1A SOT363
  • Transistors - FETs, MOSFETs - Single
  • RMD1N25ES9 Datasheet
  • 6-TSSOP, SC-88, SOT-363
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 27886
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
RMD1N25ES9
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Rectron USA
Description
MOSFET N-CHANNEL 25V 1.1A SOT363
Package
Bulk
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
SOT-363
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
800mW (Ta)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
1.1A (Ta)
Rds On (Max) @ Id, Vgs
600mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
30 pF @ 10 V
Vgs (Max)
±12V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Package_case
6-TSSOP, SC-88, SOT-363

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