Vishay Siliconix SI1026X-T1-GE3
- SI1026X-T1-GE3
- Vishay Siliconix
- MOSFET 2N-CH 60V 0.305A SC89-6
- Transistors - FETs, MOSFETs - Arrays
- SI1026X-T1-GE3 Datasheet
- SOT-563, SOT-666
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 11744
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SI1026X-T1-GE3 |
Category Transistors - FETs, MOSFETs - Arrays |
Manufacturer Vishay Siliconix |
Description MOSFET 2N-CH 60V 0.305A SC89-6 |
Package Cut Tape (CT) |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case SOT-563, SOT-666 |
Supplier Device Package SC-89 (SOT-563F) |
Power - Max 250mW |
FET Type 2 N-Channel (Dual) |
FET Feature Logic Level Gate |
Drain to Source Voltage (Vdss) 60V |
Current - Continuous Drain (Id) @ 25°C 305mA |
Rds On (Max) @ Id, Vgs 1.4Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds 30pF @ 25V |
Package_case SOT-563, SOT-666 |
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Vishay Siliconix
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