Vishay Siliconix SI2316DS-T1-E3
- SI2316DS-T1-E3
- Vishay Siliconix
- MOSFET N-CH 30V 2.9A SOT23-3
- Transistors - FETs, MOSFETs - Single
- SI2316DS-T1-E3 Datasheet
- TO-236-3, SC-59, SOT-23-3
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 8399
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SI2316DS-T1-E3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 30V 2.9A SOT23-3 |
Package Tape & Reel (TR) |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package SOT-23-3 (TO-236) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 700mW (Ta) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 30 V |
Current - Continuous Drain (Id) @ 25°C 2.9A (Ta) |
Rds On (Max) @ Id, Vgs 50mOhm @ 3.4A, 10V |
Vgs(th) (Max) @ Id 800mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 215 pF @ 15 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix
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