Vishay Siliconix SI2319DS-T1-GE3
- SI2319DS-T1-GE3
- Vishay Siliconix
- MOSFET P-CH 40V 2.3A SOT23-3
- Transistors - FETs, MOSFETs - Single
- SI2319DS-T1-GE3 Datasheet
- TO-236-3, SC-59, SOT-23-3
- Jinftry-Reel®
- Lead free / RoHS Compliant
- 3007
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SI2319DS-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET P-CH 40V 2.3A SOT23-3 |
Package Jinftry-Reel® |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package SOT-23-3 (TO-236) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 750mW (Ta) |
FET Type P-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 40 V |
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta) |
Rds On (Max) @ Id, Vgs 82mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 470 pF @ 20 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-236-3, SC-59, SOT-23-3 |
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