Vishay Siliconix SI2365EDS-T1-GE3
- SI2365EDS-T1-GE3
- Vishay Siliconix
- MOSFET P-CH 20V 5.9A TO236
- Transistors - FETs, MOSFETs - Single
- SI2365EDS-T1-GE3 Datasheet
- TO-236-3, SC-59, SOT-23-3
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 17939
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SI2365EDS-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET P-CH 20V 5.9A TO236 |
Package Cut Tape (CT) |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package SOT-23-3 (TO-236) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 1W (Ta), 1.7W (Tc) |
FET Type P-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 20 V |
Current - Continuous Drain (Id) @ 25°C 5.9A (Tc) |
Rds On (Max) @ Id, Vgs 32mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 8 V |
Input Capacitance (Ciss) (Max) @ Vds - |
Vgs (Max) ±8V |
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V |
Package_case TO-236-3, SC-59, SOT-23-3 |
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