SI4838DY-T1-E3

Vishay Siliconix SI4838DY-T1-E3

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  • SI4838DY-T1-E3
  • Vishay Siliconix
  • MOSFET N-CH 12V 17A 8SO
  • Transistors - FETs, MOSFETs - Single
  • SI4838DY-T1-E3 Datasheet
  • 8-SOIC (0.154\", 3.90mm Width)
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 3102
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
SI4838DY-T1-E3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 12V 17A 8SO
Package
Tube
Series
TrenchFET®
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154\", 3.90mm Width)
Supplier Device Package
8-SOIC
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
1.6W (Ta)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
17A (Ta)
Rds On (Max) @ Id, Vgs
3mOhm @ 25A, 4.5V
Vgs(th) (Max) @ Id
600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
-
Vgs (Max)
±8V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Package_case
8-SOIC (0.154\", 3.90mm Width)

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Vishay Siliconix
Vishay Siliconix
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