SI7102DN-T1-E3

Vishay Siliconix SI7102DN-T1-E3

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  • SI7102DN-T1-E3
  • Vishay Siliconix
  • MOSFET N-CH 12V 35A PPAK 1212-8
  • Transistors - FETs, MOSFETs - Single
  • SI7102DN-T1-E3 Datasheet
  • PowerPAK® 1212-8
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 4587
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
SI7102DN-T1-E3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 12V 35A PPAK 1212-8
Package
Cut Tape (CT)
Series
TrenchFET®
Operating Temperature
-50°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Supplier Device Package
PowerPAK® 1212-8
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3.8W (Ta), 52W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Rds On (Max) @ Id, Vgs
3.8mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds
3720 pF @ 6 V
Vgs (Max)
±8V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Package_case
PowerPAK® 1212-8

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Vishay Siliconix
Vishay Siliconix
Vishay - Vishay’s product portfolio is an unmatched collection of discrete semiconductors (diodes, MOSFETs, and optoelectronics) and passive components (resistors, inductors, and capacitors). These components are used in virtually all types of ...
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