Vishay Siliconix SI8406DB-T2-E1
- SI8406DB-T2-E1
- Vishay Siliconix
- MOSFET N-CH 20V 16A 6MICRO FOOT
- Transistors - FETs, MOSFETs - Single
- SI8406DB-T2-E1 Datasheet
- 6-UFBGA
- Bulk
- Lead free / RoHS Compliant
- 1119
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SI8406DB-T2-E1 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 20V 16A 6MICRO FOOT |
Package Bulk |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 6-UFBGA |
Supplier Device Package 6-Micro Foot™ (1.5x1) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 2.77W (Ta), 13W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 20 V |
Current - Continuous Drain (Id) @ 25°C 16A (Tc) |
Rds On (Max) @ Id, Vgs 33mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id 850mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 8 V |
Input Capacitance (Ciss) (Max) @ Vds 830 pF @ 10 V |
Vgs (Max) ±8V |
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V |
Package_case 6-UFBGA |
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Vishay Siliconix
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