Vishay Siliconix SI8465DB-T2-E1
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- SI8465DB-T2-E1
- Vishay Siliconix
- MOSFET P-CH 20V 4MICROFOOT
- Transistors - FETs, MOSFETs - Single
- SI8465DB-T2-E1 Datasheet
- 4-XFBGA, CSPBGA
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 1902
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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| Part Number SI8465DB-T2-E1 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET P-CH 20V 4MICROFOOT |
| Package Cut Tape (CT) |
| Series TrenchFET® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 4-XFBGA, CSPBGA |
| Supplier Device Package 4-Microfoot |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 780mW (Ta), 1.8W (Tc) |
| FET Type P-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 20 V |
| Current - Continuous Drain (Id) @ 25°C 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs 104mOhm @ 1.5A, 4.5V |
| Vgs(th) (Max) @ Id 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 10 V |
| Vgs (Max) ±12V |
| Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V |
| Package_case 4-XFBGA, CSPBGA |
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