SIA414DJ-T1-GE3

Vishay Siliconix SIA414DJ-T1-GE3

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  • SIA414DJ-T1-GE3
  • Vishay Siliconix
  • MOSFET N-CH 8V 12A PPAK SC70-6
  • Transistors - FETs, MOSFETs - Single
  • SIA414DJ-T1-GE3 Datasheet
  • PowerPAK® SC-70-6
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 3299
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
SIA414DJ-T1-GE3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 8V 12A PPAK SC70-6
Package
Cut Tape (CT)
Series
TrenchFET®
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® SC-70-6
Supplier Device Package
PowerPAK® SC-70-6
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3.5W (Ta), 19W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
8 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Rds On (Max) @ Id, Vgs
11mOhm @ 9.7A, 4.5V
Vgs(th) (Max) @ Id
800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
1800 pF @ 4 V
Vgs (Max)
±5V
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V
Package_case
PowerPAK® SC-70-6

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Vishay Siliconix
Vishay Siliconix
Vishay - Vishay’s product portfolio is an unmatched collection of discrete semiconductors (diodes, MOSFETs, and optoelectronics) and passive components (resistors, inductors, and capacitors). These components are used in virtually all types of ...
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