Vishay Siliconix SIA430DJ-T1-GE3
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- SIA430DJ-T1-GE3
- Vishay Siliconix
- MOSFET N-CH 20V 12A PPAK SC70-6
- Transistors - FETs, MOSFETs - Single
- SIA430DJ-T1-GE3 Datasheet
- PowerPAK® SC-70-6
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 3598
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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| Part Number SIA430DJ-T1-GE3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET N-CH 20V 12A PPAK SC70-6 |
| Package Cut Tape (CT) |
| Series TrenchFET® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case PowerPAK® SC-70-6 |
| Supplier Device Package PowerPAK® SC-70-6 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 3.5W (Ta), 19.2W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 20 V |
| Current - Continuous Drain (Id) @ 25°C 12A (Tc) |
| Rds On (Max) @ Id, Vgs 13.5mOhm @ 7A, 10V |
| Vgs(th) (Max) @ Id 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 10 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
| Package_case PowerPAK® SC-70-6 |
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