SIB422EDK-T1-GE3

Vishay Siliconix SIB422EDK-T1-GE3

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  • SIB422EDK-T1-GE3
  • Vishay Siliconix
  • MOSFET N-CH 20V 9A PPAK SC75-6
  • Transistors - FETs, MOSFETs - Single
  • SIB422EDK-T1-GE3 Datasheet
  • PowerPAK® SC-75-6
  • Tape & Reel (TR)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 25342
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
SIB422EDK-T1-GE3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 20V 9A PPAK SC75-6
Package
Tape & Reel (TR)
Series
TrenchFET®
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® SC-75-6
Supplier Device Package
PowerPAK® SC-75-6
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.5W (Ta), 13W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Rds On (Max) @ Id, Vgs
30mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds
-
Vgs (Max)
±8V
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Package_case
PowerPAK® SC-75-6

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Vishay Siliconix
Vishay Siliconix
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