Vishay Siliconix SIDR220EP-T1-RE3
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- SIDR220EP-T1-RE3
- Vishay Siliconix
- N-CHANNEL 25 V (D-S) 175C MOSFET
- Transistors - FETs, MOSFETs - Single
- SIDR220EP-T1-RE3 Datasheet
- PowerPAK® SO-8
- Tube
-
Lead free / RoHS Compliant - 3423
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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| Part Number SIDR220EP-T1-RE3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description N-CHANNEL 25 V (D-S) 175C MOSFET |
| Package Tube |
| Series TrenchFET® Gen IV |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case PowerPAK® SO-8 |
| Supplier Device Package PowerPAK® SO-8DC |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 6.25W (Ta), 415W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 25 V |
| Current - Continuous Drain (Id) @ 25°C 92.8A (Ta), 415A (Tc) |
| Rds On (Max) @ Id, Vgs 0.58mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id 2.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 10850 pF @ 10 V |
| Vgs (Max) +16V, -12V |
| Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
| Package_case PowerPAK® SO-8 |
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