Vishay Siliconix SIE812DF-T1-E3
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- SIE812DF-T1-E3
- Vishay Siliconix
- MOSFET N-CH 40V 60A 10POLARPAK
- Transistors - FETs, MOSFETs - Single
- SIE812DF-T1-E3 Datasheet
- 10-PolarPAK® (L)
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 3577
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
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| Part Number SIE812DF-T1-E3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET N-CH 40V 60A 10POLARPAK |
| Package Cut Tape (CT) |
| Series TrenchFET® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 10-PolarPAK® (L) |
| Supplier Device Package 10-PolarPAK® (L) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 5.2W (Ta), 125W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 40 V |
| Current - Continuous Drain (Id) @ 25°C 60A (Tc) |
| Rds On (Max) @ Id, Vgs 2.6mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 8300 pF @ 20 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
| Package_case 10-PolarPAK® (L) |
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