Vishay Siliconix SIJH112E-T1-GE3
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- SIJH112E-T1-GE3
- Vishay Siliconix
- MOSFET N-CH 100V 23A/225A PPAK
- Transistors - FETs, MOSFETs - Single
- SIJH112E-T1-GE3 Datasheet
- 8-PowerTDFN
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 4727
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
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| Part Number SIJH112E-T1-GE3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET N-CH 100V 23A/225A PPAK |
| Package Cut Tape (CT) |
| Series - |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-PowerTDFN |
| Supplier Device Package PowerPAK® 8 x 8 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 3.3W (Ta), 333W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 100 V |
| Current - Continuous Drain (Id) @ 25°C 23A (Ta), 225A (Tc) |
| Rds On (Max) @ Id, Vgs 2.8mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 8050 pF @ 50 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) - |
| Package_case 8-PowerTDFN |
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