Vishay Siliconix SISC06DN-T1-GE3
- SISC06DN-T1-GE3
- Vishay Siliconix
- MOSFET N-CH 30V 27.6A/40A PPAK
- Transistors - FETs, MOSFETs - Single
- SISC06DN-T1-GE3 Datasheet
- PowerPAK® 1212-8
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 2976
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SISC06DN-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 30V 27.6A/40A PPAK |
Package Cut Tape (CT) |
Series TrenchFET® Gen IV |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case PowerPAK® 1212-8 |
Supplier Device Package PowerPAK® 1212-8 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 3.7W (Ta), 46.3W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 30 V |
Current - Continuous Drain (Id) @ 25°C 27.6A (Ta), 40A (Tc) |
Rds On (Max) @ Id, Vgs 2.7mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 2455 pF @ 15 V |
Vgs (Max) +20V, -16V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case PowerPAK® 1212-8 |
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Customer reviews
Vishay Siliconix
Vishay - Vishay’s product portfolio is an unmatched collection of discrete semiconductors (diodes, MOSFETs, and optoelectronics) and passive components (resistors, inductors, and capacitors). These components are used in virtually all types of ...
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