Vishay Siliconix SIZF906DT-T1-GE3
- SIZF906DT-T1-GE3
- Vishay Siliconix
- MOSFET 2 N-CH 30V 60A POWERPAIR
- Transistors - FETs, MOSFETs - Arrays
- SIZF906DT-T1-GE3 Datasheet
- 8-PowerWDFN
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 9214
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SIZF906DT-T1-GE3 |
Category Transistors - FETs, MOSFETs - Arrays |
Manufacturer Vishay Siliconix |
Description MOSFET 2 N-CH 30V 60A POWERPAIR |
Package Cut Tape (CT) |
Series TrenchFET® Gen IV |
Operating Temperature -55°C ~ 150°C (TA) |
Mounting Type Surface Mount |
Package / Case 8-PowerWDFN |
Supplier Device Package 8-PowerPair® (6x5) |
Power - Max 38W (Tc), 83W (Tc) |
FET Type 2 N-Channel (Half Bridge) |
FET Feature Standard |
Drain to Source Voltage (Vdss) 30V |
Current - Continuous Drain (Id) @ 25°C 60A (Tc) |
Rds On (Max) @ Id, Vgs 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V, 92nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 15V, 8200pF @ 15V |
Package_case 8-PowerWDFN |
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Customer reviews
Vishay Siliconix
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