Vishay Siliconix SQ2310ES-T1_GE3
- SQ2310ES-T1_GE3
- Vishay Siliconix
- MOSFET N-CH 20V 6A TO236
- Transistors - FETs, MOSFETs - Single
- SQ2310ES-T1_GE3 Datasheet
- TO-236-3, SC-59, SOT-23-3
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 15539
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SQ2310ES-T1_GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 20V 6A TO236 |
Package Tape & Reel (TR) |
Series TrenchFET® |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package SOT-23-3 (TO-236) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 2W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 20 V |
Current - Continuous Drain (Id) @ 25°C 6A (Tc) |
Rds On (Max) @ Id, Vgs 30mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 8.5 nC @ 4.5 V |
Input Capacitance (Ciss) (Max) @ Vds 485 pF @ 10 V |
Vgs (Max) ±8V |
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V |
Package_case TO-236-3, SC-59, SOT-23-3 |
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