SQ2310ES-T1_GE3

Vishay Siliconix SQ2310ES-T1_GE3

The picture is for reference only, please refer to the product specification

  • SQ2310ES-T1_GE3
  • Vishay Siliconix
  • MOSFET N-CH 20V 6A TO236
  • Transistors - FETs, MOSFETs - Single
  • SQ2310ES-T1_GE3 Datasheet
  • TO-236-3, SC-59, SOT-23-3
  • Tape & Reel (TR)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 15539
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
SQ2310ES-T1_GE3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 20V 6A TO236
Package
Tape & Reel (TR)
Series
TrenchFET®
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3 (TO-236)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Rds On (Max) @ Id, Vgs
30mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
485 pF @ 10 V
Vgs (Max)
±8V
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Package_case
TO-236-3, SC-59, SOT-23-3

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Vishay Siliconix
Vishay Siliconix
Vishay - Vishay’s product portfolio is an unmatched collection of discrete semiconductors (diodes, MOSFETs, and optoelectronics) and passive components (resistors, inductors, and capacitors). These components are used in virtually all types of ...
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