STGYA120M65DF2

STMicroelectronics STGYA120M65DF2

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  • STGYA120M65DF2
  • STMicroelectronics
  • TRENCH GATE FIELD-STOP IGBT, M S
  • Transistors - IGBTs - Single
  • STGYA120M65DF2 Datasheet
  • TO-247-3 Exposed Pad
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 28133
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
STGYA120M65DF2
Category
Transistors - IGBTs - Single
Manufacturer
STMicroelectronics
Description
TRENCH GATE FIELD-STOP IGBT, M S
Package
Tube
Series
M
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3 Exposed Pad
Supplier Device Package
MAX247™
Power - Max
625 W
Input Type
Standard
Reverse Recovery Time (trr)
202 ns
Current - Collector (Ic) (Max)
160 A
Voltage - Collector Emitter Breakdown (Max)
650 V
IGBT Type
NPT, Trench Field Stop
Vce(on) (Max) @ Vge, Ic
1.95V @ 15V, 120A
Gate Charge
420 nC
Td (on/off) @ 25°C
66ns/185ns
Test Condition
400V, 120A, 4.7Ohm, 15V
Current - Collector Pulsed (Icm)
360 A
Switching Energy
1.8mJ (on), 4.41mJ (off)
Package_case
TO-247-3 Exposed Pad

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STMicroelectronics
STMicroelectronics
STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual ...
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