STMicroelectronics STGYA120M65DF2
- STGYA120M65DF2
- STMicroelectronics
- TRENCH GATE FIELD-STOP IGBT, M S
- Transistors - IGBTs - Single
- STGYA120M65DF2 Datasheet
- TO-247-3 Exposed Pad
- Tube
- Lead free / RoHS Compliant
- 28133
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number STGYA120M65DF2 |
Category Transistors - IGBTs - Single |
Manufacturer STMicroelectronics |
Description TRENCH GATE FIELD-STOP IGBT, M S |
Package Tube |
Series M |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-3 Exposed Pad |
Supplier Device Package MAX247™ |
Power - Max 625 W |
Input Type Standard |
Reverse Recovery Time (trr) 202 ns |
Current - Collector (Ic) (Max) 160 A |
Voltage - Collector Emitter Breakdown (Max) 650 V |
IGBT Type NPT, Trench Field Stop |
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 120A |
Gate Charge 420 nC |
Td (on/off) @ 25°C 66ns/185ns |
Test Condition 400V, 120A, 4.7Ohm, 15V |
Current - Collector Pulsed (Icm) 360 A |
Switching Energy 1.8mJ (on), 4.41mJ (off) |
Package_case TO-247-3 Exposed Pad |
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