Vishay Siliconix SUD35N10-26P-GE3
- SUD35N10-26P-GE3
- Vishay Siliconix
- MOSFET N-CH 100V 35A TO252
- Transistors - FETs, MOSFETs - Single
- SUD35N10-26P-GE3 Datasheet
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 4430
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number SUD35N10-26P-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 100V 35A TO252 |
Package Cut Tape (CT) |
Series TrenchFET® |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package TO-252AA |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 8.3W (Ta), 83W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 100 V |
Current - Continuous Drain (Id) @ 25°C 35A (Tc) |
Rds On (Max) @ Id, Vgs 26mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id 4.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 12 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V |
Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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