Toshiba Semiconductor and Storage TK31E60X,S1X
- TK31E60X,S1X
- Toshiba Semiconductor and Storage
- MOSFET N-CH 600V 30.8A TO220
- Transistors - FETs, MOSFETs - Single
- TK31E60X,S1X Datasheet
- TO-220-3
- Tube
- Lead free / RoHS Compliant
- 18410
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number TK31E60X,S1X |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description MOSFET N-CH 600V 30.8A TO220 |
Package Tube |
Series DTMOSIV-H |
Operating Temperature 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 |
Supplier Device Package TO-220 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 230W (Tc) |
FET Type N-Channel |
FET Feature Super Junction |
Drain to Source Voltage (Vdss) 600 V |
Current - Continuous Drain (Id) @ 25°C 30.8A (Ta) |
Rds On (Max) @ Id, Vgs 88mOhm @ 9.4A, 10V |
Vgs(th) (Max) @ Id 3.5V @ 1.5mA |
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 300 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-220-3 |
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