TK4R3E06PL,S1X

Toshiba Semiconductor and Storage TK4R3E06PL,S1X

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  • TK4R3E06PL,S1X
  • Toshiba Semiconductor and Storage
  • MOSFET N-CH 60V 80A TO220
  • Transistors - FETs, MOSFETs - Single
  • TK4R3E06PL,S1X Datasheet
  • TO-220-3
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 3480
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
TK4R3E06PL,S1X
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 60V 80A TO220
Package
Bulk
Series
U-MOSIX-H
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
87W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Rds On (Max) @ Id, Vgs
7.2mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id
2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
48.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3280 pF @ 30 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package_case
TO-220-3

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Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage - Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, ...
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