Toshiba Semiconductor and Storage TK6A55DA(STA4,Q,M)
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- TK6A55DA(STA4,Q,M)
- Toshiba Semiconductor and Storage
- MOSFET N-CH 550V 5.5A TO220SIS
- Transistors - FETs, MOSFETs - Single
- TK6A55DA(STA4,Q,M) Datasheet
- TO-220-3 Full Pack
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 11963
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
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| Part Number TK6A55DA(STA4,Q,M) |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Toshiba Semiconductor and Storage |
| Description MOSFET N-CH 550V 5.5A TO220SIS |
| Package Cut Tape (CT) |
| Series π-MOSVII |
| Operating Temperature 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-220-3 Full Pack |
| Supplier Device Package TO-220SIS |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 35W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 550 V |
| Current - Continuous Drain (Id) @ 25°C 5.5A (Ta) |
| Rds On (Max) @ Id, Vgs 1.48Ohm @ 2.8A, 10V |
| Vgs(th) (Max) @ Id 4.4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 25 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-220-3 Full Pack |
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