Toshiba Semiconductor and Storage TPC8035-H(TE12L,QM
- TPC8035-H(TE12L,QM
- Toshiba Semiconductor and Storage
- MOSFET N-CH 30V 18A 8SOP
- Transistors - FETs, MOSFETs - Single
- TPC8035-H(TE12L,QM Datasheet
- 8-SOIC (0.173\", 4.40mm Width)
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 3953
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number TPC8035-H(TE12L,QM |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description MOSFET N-CH 30V 18A 8SOP |
Package Cut Tape (CT) |
Series U-MOSVI-H |
Operating Temperature 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-SOIC (0.173\", 4.40mm Width) |
Supplier Device Package 8-SOP (5.5x6.0) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 1W (Ta) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 30 V |
Current - Continuous Drain (Id) @ 25°C 18A (Ta) |
Rds On (Max) @ Id, Vgs 3.2mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id 2.3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs 82 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 7800 pF @ 10 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case 8-SOIC (0.173\", 4.40mm Width) |
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