Toshiba Semiconductor and Storage TPN11003NL,LQ
- TPN11003NL,LQ
- Toshiba Semiconductor and Storage
- MOSFET N CH 30V 11A 8TSON-ADV
- Transistors - FETs, MOSFETs - Single
- TPN11003NL,LQ Datasheet
- 8-PowerVDFN
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 4059
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number TPN11003NL,LQ |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description MOSFET N CH 30V 11A 8TSON-ADV |
Package Cut Tape (CT) |
Series U-MOSVIII-H |
Operating Temperature 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-PowerVDFN |
Supplier Device Package 8-TSON Advance (3.1x3.1) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 700mW (Ta), 19W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 30 V |
Current - Continuous Drain (Id) @ 25°C 11A (Tc) |
Rds On (Max) @ Id, Vgs 11mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id 2.3V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 15 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case 8-PowerVDFN |
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