TPN7R506NH,L1Q

Toshiba Semiconductor and Storage TPN7R506NH,L1Q

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  • TPN7R506NH,L1Q
  • Toshiba Semiconductor and Storage
  • MOSFET N-CH 60V 26A 8TSON
  • Transistors - FETs, MOSFETs - Single
  • TPN7R506NH,L1Q Datasheet
  • 8-PowerVDFN
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 16346
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
TPN7R506NH,L1Q
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 60V 26A 8TSON
Package
Cut Tape (CT)
Series
U-MOSVIII-H
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Supplier Device Package
8-TSON Advance (3.1x3.1)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
700mW (Ta), 42W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
26A (Tc)
Rds On (Max) @ Id, Vgs
7.5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1800 pF @ 30 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
6.5V, 10V
Package_case
8-PowerVDFN

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Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage - Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, ...
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