Toshiba Semiconductor and Storage TPN7R506NH,L1Q
- TPN7R506NH,L1Q
- Toshiba Semiconductor and Storage
- MOSFET N-CH 60V 26A 8TSON
- Transistors - FETs, MOSFETs - Single
- TPN7R506NH,L1Q Datasheet
- 8-PowerVDFN
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 16346
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number TPN7R506NH,L1Q |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description MOSFET N-CH 60V 26A 8TSON |
Package Cut Tape (CT) |
Series U-MOSVIII-H |
Operating Temperature 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-PowerVDFN |
Supplier Device Package 8-TSON Advance (3.1x3.1) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 700mW (Ta), 42W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 60 V |
Current - Continuous Drain (Id) @ 25°C 26A (Tc) |
Rds On (Max) @ Id, Vgs 7.5mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id 4V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 30 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 6.5V, 10V |
Package_case 8-PowerVDFN |
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