Taiwan Semiconductor Corporation TSM061NA03CV RGG
- TSM061NA03CV RGG
- Taiwan Semiconductor Corporation
- MOSFET N-CH 30V 66A 8PDFN
- Transistors - FETs, MOSFETs - Single
- TSM061NA03CV RGG Datasheet
- 8-PowerWDFN
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 3377
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number TSM061NA03CV RGG |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Taiwan Semiconductor Corporation |
Description MOSFET N-CH 30V 66A 8PDFN |
Package Tape & Reel (TR) |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-PowerWDFN |
Supplier Device Package 8-PDFN (3x3) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 44.6W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 30 V |
Current - Continuous Drain (Id) @ 25°C 66A (Tc) |
Rds On (Max) @ Id, Vgs 6.1mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 19.3 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 1136 pF @ 15 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case 8-PowerWDFN |
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