TSM4N60ECP ROG

Taiwan Semiconductor Corporation TSM4N60ECP ROG

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  • TSM4N60ECP ROG
  • Taiwan Semiconductor Corporation
  • MOSFET N-CHANNEL 600V 4A TO252
  • Transistors - FETs, MOSFETs - Single
  • TSM4N60ECP ROG Datasheet
  • TO-252-3, DPak (2 Leads + Tab), SC-63
  • Cut Tape (CT)
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 21013
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
TSM4N60ECP ROG
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Taiwan Semiconductor Corporation
Description
MOSFET N-CHANNEL 600V 4A TO252
Package
Cut Tape (CT)
Series
-
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252, (D-Pak)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
86.2W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Rds On (Max) @ Id, Vgs
2.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
545 pF @ 25 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-252-3, DPak (2 Leads + Tab), SC-63

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