TSM60NB099PW C1G

Taiwan Semiconductor Corporation TSM60NB099PW C1G

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  • TSM60NB099PW C1G
  • Taiwan Semiconductor Corporation
  • MOSFET N-CHANNEL 600V 38A TO247
  • Transistors - FETs, MOSFETs - Single
  • TSM60NB099PW C1G Datasheet
  • TO-247-3
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 27863
  • Spot Inventory / Athorized Dstributor / Factory Excess Stock
  • 1 year quality assurance 》
  • Click to get rates
Part Number
TSM60NB099PW C1G
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Taiwan Semiconductor Corporation
Description
MOSFET N-CHANNEL 600V 38A TO247
Package
Tube
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
329W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
38A (Tc)
Rds On (Max) @ Id, Vgs
99mOhm @ 11.7A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2587 pF @ 100 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-247-3

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