Toshiba Semiconductor and Storage TW070J120B,S1Q
- TW070J120B,S1Q
- Toshiba Semiconductor and Storage
- SICFET N-CH 1200V 36A TO3P
- Transistors - FETs, MOSFETs - Single
- TW070J120B,S1Q Datasheet
- TO-3P-3, SC-65-3
- Tube
- Lead free / RoHS Compliant
- 26663
- Spot Inventory / Athorized Dstributor / Factory Excess Stock
- 1 year quality assurance 》
- Click to get rates
Part Number TW070J120B,S1Q |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description SICFET N-CH 1200V 36A TO3P |
Package Tube |
Series - |
Operating Temperature -55°C ~ 175°C |
Mounting Type Through Hole |
Package / Case TO-3P-3, SC-65-3 |
Supplier Device Package TO-3P(N) |
Technology SiCFET (Silicon Carbide) |
Power Dissipation (Max) 272W (Tc) |
FET Type N-Channel |
FET Feature Standard |
Drain to Source Voltage (Vdss) 1200 V |
Current - Continuous Drain (Id) @ 25°C 36A (Tc) |
Rds On (Max) @ Id, Vgs 90mOhm @ 18A, 20V |
Vgs(th) (Max) @ Id 5.8V @ 20mA |
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 20 V |
Input Capacitance (Ciss) (Max) @ Vds 1680 pF @ 800 V |
Vgs (Max) ±25V, -10V |
Drive Voltage (Max Rds On, Min Rds On) 20V |
Package_case TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage
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