Infineon High Power Density SiC MOSFET
Infineon High Power Density SiC MOSFETs
New materials are an important means for manufacturers to improve the power density of devices. We have used GaN as an example in the technical innovation part. You can use Infineon's IGO60R070D1AUMA1 to gain an in-depth understanding of this and feel the high power density performance of the product. The manufacturer of this device is on https://www.jinftry.com/ The part number is also IGO60R070D1AUMA1.
Next, we will introduce another device from Infineon. SiC technology is also a high-quality route to increase the power density of devices. AIMW120R060M1HXKSA1.
The AIMW120R060M1HXKSA1 is designed to meet the high requirements of the automotive industry for efficiency, reliability, quality and performance. At the same time, benefiting from Infineon's CoolSiC MOSFET technology, this device not only has higher power density itself, but also in terms of system solutions, can help the solution meet the new regulations for higher energy efficiency of electric vehicles.
According to the difference in the manufacturing process, SiC devices will have two mainstream methods, planar and trench. Infineon technology falls into the latter category, with the advantage that it is easier to meet performance requirements without deviating from the safe conditions of the gate oxide. With more than 20 years of R&D experience in SiC, Infineon's CoolSiC MOSFET technology delivers outstanding performance, reliability and ease of use. VGS(th) is designed for Infineon to be above 4V, thereby reducing the "misleading turn-on" caused by noise. The V of AIMW120R060M1HXKSA1 is 4.5V.
Taken together, the product advantages of the AIMW120R060M1HXKSA1 include low gate charge and device capacitance in the switch, no reverse recovery losses in anti-parallel diodes, low temperature-independent switching losses, and no threshold on-state characteristics, so the device has excellent power density, frequency and efficiency.
Potential applications for the AIMW120R060M1HXKSA1 include on-board chargers/PFCs, boost/DC-DC converters, and auxiliary inverters. In order to facilitate the smooth switching of engineers and friends from traditional Si IGBT applications to SiC MOSFETs, this device provides a voltage compatible with IGBT drivers (on-voltage is 18V), making it easier to upgrade solutions.
The higher switching frequency means that the AIMW120R060M1HXKSA1 can help designers reduce the volume and weight of magnetic components by up to 5%, and the cooling components and energy consumption of the system can be reduced. On the one hand, the system has higher power density and on the other hand, it also helps designers Significantly reduces application costs. Taking auxiliary inverter application as an example, in automotive EPS (Electric Power Steering) application, the required electric motor can be controlled by auxiliary inverter. Under the trend of smart cockpit, the space available for each functional device has been significantly reduced, and AIMW120R060M1HXKSA1 is undoubtedly a good solution to the problem. At the same time, other applications that require auxiliary inverters, such as air conditioner compressors, on-board chargers, and active chassis control, can also benefit from this advantage. In addition, the weight reduction is in line with the concept of energy saving and environmental protection in automobiles.
