Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are further divided into "discrete" and "integrated" in the form of packaging, such as: diodes, transistors, Transistors etc.
Naming method of Chinese semiconductor discrete device models
The models of Chinese transistors and other semiconductor devices usually consist of the following five parts:
Part 1: Use Arabic numerals to indicate the number of effective electrodes of the device. For example: 3 of 3AX81-81
Part 2: Use Chinese pinyin letters to indicate the polarity and material of the device. For example: A of 3AX81-81
Part 3: Use Chinese pinyin letters to indicate the type of device. For example: X of 3AX81-81
Part 4: Use Arabic numerals to indicate the serial number of the device. For example: 81 of 3AX81-81
Part 5: Use Chinese Pinyin letters to express specifications. For example: -81 of 3AX81-81
However, field effect transistors, special semiconductor devices, composite tubes, and PIN diodes (diodes with a layer of intrinsic semiconductor or low-concentration impurity semiconductor sandwiched between the P region and the N region). When the operating frequency exceeds 100MHz, due to the minority current carrying Due to the storage effect of diodes and the transit time effect in the I layer, the diode loses its rectifying effect and becomes an impedance element, and its impedance value changes with DC bias) and laser devices are only composed of the third and third models. Part 4 and Part 5. For example: CS2B means: B specification No. 2 field effect transistor.
Composition symbols and their meanings of Chinese semiconductor discrete device models
Use a number to represent the number of effective electrodes of the device
Use Chinese pinyin letters to indicate device materials and polarity
Use Chinese pinyin letters to indicate the type of device
Use Arabic numerals to indicate the serial number of the device
Use Chinese pinyin letters to express specifications
diode
A
N type, germanium material P ordinary tube D low frequency high power tube
B P type, germanium material V Microwave tube A High frequency high power tube
C N type, silicon material W voltage regulator tube T semiconductor thyristor
D P type, silicon material C Parameter tube Y Body effect device
triode
A
PNP type, germanium material Z rectifier tube B avalanche tube
B NPN type, germanium material L Rectifier stack J Step recovery tube
C PNP type, silicon material S tunnel tube CS field effect tube
D NPN type, silicon material N damping tube BT semiconductor special device
U Optoelectronic device FH composite tube
E Compound material K Switch tube PIN PIN type tube
X low frequency low power tube
JG Laser Devices
G high frequency low power tube
Semiconductor discrete device model naming method (USA)
American semiconductor discrete device model naming method
The nomenclature of transistors or other semiconductor devices in the United States is confusing. The Electronic Industries Association’s naming method for semiconductor discrete devices is as follows:
Part 1: Use symbols to indicate the type of device usage. JAN-military grade, JANTX-special military grade, JANTXV-super special military grade, JANS-aerospace grade, (none)-non-military supplies.
Part 2: Use numbers to express the number of pn junctions. 1-diode, 2=transistor, 3-three pn junction devices, n-n pn junction devices.
Part 3: Electronic Industries Association (EIA) registered mark. N-This device is registered with the Electronic Industries Association (EIA).
Part 4: Electronic Industries Association registration sequence number. Multi-digit number - The serial number of the device registered with the Electronic Industries Association.
Part 5: Use letters to indicate device classification. A, B, C, D, ┄┄-different grades of the same type of device. For example: JAN2N3251A （Microsemi Corporation） represents PNP silicon high-frequency low-power switching transistor, JAN-military grade, 2-transistor, N-EIA registration mark, 3251-EIA registration sequence number, A-2N3251A grade.
Semiconductor discrete device model naming method (Japan)
Semiconductor discrete devices produced in Japan consist of five to seven parts. Usually only the first five parts are used, and the symbolic meanings of each part are as follows:
Part 1: Use numbers to indicate the number or type of effective electrodes of the device. 0-Photoelectric (i.e. photosensitive) diode, triode and combination tube of the above devices, 1-diode, 2 triode or other devices with two pn junctions, 3-other devices with four effective electrodes or three pn junctions, ┄┄And so on.
Part 2: Japan Electronics Industries Association JEIA registered mark. S- indicates semiconductor discrete devices that have been registered with JEIA, the Japan Electronics Industry Association.
Part 3: Use letters to indicate the polarity and type of materials used in the device. A-PNP type high frequency tube, B-PNP type low frequency tube, C-NPN type high frequency tube, D-NPN type low frequency tube, F-P control pole thyristor, G-N control pole thyristor, H-N base unijunction transistor , J-P channel field effect transistor, K-N channel field effect tube, M-triac.
Part 4: Use numbers to indicate the serial number registered with the Japan Electronics Industry Association JEIA. An integer of more than two digits - starting from "11", indicating the serial number registered with the Japan Electronics Industry Association JEIA; devices with the same performance from different companies can use the same serial number; the larger the number, the more recent the product.
Part 5: Use letters to indicate improved product marks of the same model. A, B, C, D, E and F indicate that this device is an improved product of the original model.
Semiconductor discrete device applications
Semiconductor discrete devices are one of the foundations of power electronic products and one of the core devices that constitute power electronic changing devices. They are mainly used for rectification, voltage stabilization, switching, mixing, etc. of power electronic equipment. They have a wide range of applications and large usage. Characteristics, it is widely used in many national economic fields such as consumer electronics, automotive electronics, electronic instrumentation, industrial and automatic control, computers and peripheral equipment, and network communications.
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