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Nexperia BC856xQC-Q PNP

Post Date：2022-03-02，Nexperia USA Inc.

Nexperia BC856xQC-Q PNP transistors are 65V 100mA transistors ideal for general purpose switching and amplification. The BC856xQC-Q transistors feature high power dissipation, excellent thermal performance, and strong solder joints. The low operating temperature of these devices improves the overall reliability of the system
Nexperia BC856xQC-Q PNP transistors are available in a 1.4mm x 1.2mm x 0.48mm DFN1412D-3 (SOT8009) package. The side wettable flanks (SWFs) of the DFN package improve shear and board flex capabilities. These devices are AEC-Q101 qualified and can be used in automotive applications.

Nexperia BC856xQC-Q PNP Features
AEC-Q101 Compliant
Strong power dissipation capability
low operating temperature
Excellent cooling performance
Smaller footprint compared to traditional leaded SMD packages
1.4mm x 1.2mm x 0.48mm DFN1412D-3 (SOT8009) package; 0.8mm pitch
SWF, for automatic optical inspection (AOI) of solder joints
Nexperia BC856xQC-Q PNP Application
Universal Switch and Amplification
space-constrained applications
Nexperia BC856xQC-Q PNP Specifications
Collector-Emitter Voltage (VCEO): -65V
Collector current (IC): -100m
DC Current Gain (hFE)
BC856AQC-Q: 125 to 250
BC856BQC-Q: 220 to 475
Collector peak current (ICM): -200mA
Collector-Base Voltage (VCBO): -80V
Emitter-Base Voltage (VEBO): -6V
Total Power Consumption (Ptot): 360mW to 450mW
Ambient Operating Temperature Range (Tamb): -55°C to 150°C