STM STD80N240K6

STM STD80N240K6

The STM STD80N240K6 K6 power MOSFETs have excellent RDS(on) x region and low total gate charge (Qg) for high switching speed and low losses. The integrated ESD protection diode improves the overall robustness of the STD80N240K6 MOSFET to Human Body Model (HBM) level 2.
   Compared to the previous generation MDmesh K5, the MDmesh K6 MOSFET has a lower threshold voltage, enabling lower drive voltages, resulting in lower power consumption and higher efficiency, primarily for zero-watt standby applications. The STD80N240K6 is optimized for flyback topology based applications such as LED drivers and HID lamps. The STD80N240K6 is also ideal for adapters and power supplies for flat panel displays.
STMicroelectronics STD80N240K6 800V 16A MDmesh K6 Power MOSFETs are housed in a compact DPAK (TO-252) Type A2 package.

STD80N240K6 Features
Drain-Source Voltage (VDS): 800V
Gate-Source Voltage (VGS): ±30V
Drain-source on-resistance (RDS(on)): 197mΩ (typ)
Total Gate Charge (QG): 25.9nC
Continuous leakage current (ID)

Zero Gate Voltage Drain Current (IDSS): 1µA
Gate Body Leakage Current (IGSS): ±1µA
Gate Threshold Voltage (VGS(th)): 3.5V
Pulsed drain current (IDM): 35A
Total Power Dissipation (PTOT): 105W (at TC=25°C)
100% avalanche tested
Zener Protection
Operating Junction Temperature Range (TJ): -55°C to +150°C
DPAK (TO-252) Type A2 Package
STD80N240K6 application
Flyback Converter
Adapters for Tablets, Laptops, and All-in-One Computers
LED lighting elements
display panel