24C02CT-E/MS vs BR24G128FJ-3GTE2
| Part Number |
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| Category | General Memory | General Memory |
| Manufacturer | Microchip Technology | Rohm Semiconductor |
| Description | IC EEPROM 2KBIT I2C 100KHZ 8MSOP | IC EEPROM 128KBIT I2C 8SOPJ |
| Package | Tape & Reel (TR) | Cut Tape (CT) |
| Series | - | - |
| Voltage - Supply | 4.5V ~ 5.5V | 1.6V ~ 5.5V |
| Operating Temperature | -40°C ~ 125°C (TA) | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | 8-TSSOP, 8-MSOP (0.118\", 3.00mm Width) | 8-SOIC (0.154\", 3.90mm Width) |
| Supplier Device Package | 8-MSOP | 8-SOP-J |
| Memory Size | 2Kb (256 x 8) | 128Kb (16K x 8) |
| Technology | EEPROM | EEPROM |
| Memory Type | Non-Volatile | Non-Volatile |
| Clock Frequency | 100 kHz | 400 kHz |
| Access Time | 3.5 µs | - |
| Memory Format | EEPROM | EEPROM |
| Write Cycle Time - Word, Page | 1.5ms | 5ms |
| Memory Interface | I²C | I²C |
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1. What are volatile and non-volatile memory?
Volatile memory loses data when power is off, such as RAM; non-volatile memory retains data after power is off, such as ROM and flash memory.
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2. How to measure the data read and write speed of memory?
The read and write speed of memory is usually expressed in MB/s or GB/s, reflecting the amount of data it processes per second. The faster the speed, the higher the data transmission efficiency.
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3. What is the difference between SRAM and DRAM?
SRAM (static RAM) does not require periodic refreshes and is faster but more expensive; DRAM (dynamic RAM) requires periodic refreshes and has a higher storage density and is suitable for main memory.
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4. What is High Bandwidth Memory (HBM) and what are its advantages?
HBM is a high-bandwidth, low-latency memory technology commonly used in graphics cards and AI accelerators that can handle a large number of parallel computing tasks. HBM's stacked architecture makes it take up less space and more efficient, making it an ideal choice for big data and high-performance computing applications.
