AS4PK-M3/86A vs SK82C M6G

Part Number
AS4PK-M3/86A
SK82C M6G
Category Diodes - Rectifiers - Single Diodes - Rectifiers - Single
Manufacturer Vishay Semiconductor - Diodes Division Taiwan Semiconductor Corporation
Description DIODE AVALANCHE 800V 2.4A TO277A DIODE SCHOTTKY 20V 8A DO214AB
Package Bulk Tape & Reel (TR)
Series eSMP® -
Mounting Type Surface Mount Surface Mount
Package / Case TO-277, 3-PowerDFN DO-214AB, SMC
Supplier Device Package TO-277A (SMPC) DO-214AB (SMC)
Diode Type Avalanche Schottky
Current - Average Rectified (Io) 2.4A (DC) 8A
Voltage - Forward (Vf) (Max) @ If 962 mV @ 2 A 550 mV @ 8 A
Current - Reverse Leakage @ Vr 10 µA @ 800 V 500 µA @ 20 V
Capacitance @ Vr, F 60pF @ 4V, 1MHz -
Voltage - DC Reverse (Vr) (Max) 800 V 20 V
Speed Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 1.8 µs -
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 125°C
  • 1. What is the working principle of a single rectifier diode?

    A rectifier diode conducts current when forward biased, converting the positive half wave of alternating current into direct current. When reverse biased, the diode blocks the current, thereby preventing the negative half wave from passing through and achieving rectification effect.

  • 2. What is a fast recovery diode?

    Fast recovery diode is a special type of rectifier diode with a short reverse recovery time, suitable for high-frequency power supplies and switch mode power supplies (SMPS) applications, reducing switching losses.

  • 3. What is the difference between Schottky diodes and traditional silicon rectifier diodes?

    Schottky diodes have a lower forward voltage drop (typically 0.2V to 0.3V) and faster switching speed, making them suitable for high-frequency applications. However, their reverse voltage is relatively low and is typically used in circuits with lower voltages.

  • 4. What is the reverse recovery time of a rectifier diode?

    Reverse recovery time refers to the time required for a diode to transition from a forward conducting state to a reverse blocking state. A shorter reverse recovery time is particularly important in high-frequency applications to reduce power loss.

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