AS4PK-M3/86A vs SK83C M6G

Part Number
AS4PK-M3/86A
SK83C M6G
Category Diodes - Rectifiers - Single Diodes - Rectifiers - Single
Manufacturer Vishay Semiconductor - Diodes Division Taiwan Semiconductor Corporation
Description DIODE AVALANCHE 800V 2.4A TO277A DIODE SCHOTTKY 30V 8A DO214AB
Package Bulk Tape & Reel (TR)
Series eSMP® -
Mounting Type Surface Mount Surface Mount
Package / Case TO-277, 3-PowerDFN DO-214AB, SMC
Supplier Device Package TO-277A (SMPC) DO-214AB (SMC)
Diode Type Avalanche Schottky
Current - Average Rectified (Io) 2.4A (DC) 8A
Voltage - Forward (Vf) (Max) @ If 962 mV @ 2 A 550 mV @ 8 A
Current - Reverse Leakage @ Vr 10 µA @ 800 V 500 µA @ 30 V
Capacitance @ Vr, F 60pF @ 4V, 1MHz -
Voltage - DC Reverse (Vr) (Max) 800 V 30 V
Speed Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 1.8 µs -
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 125°C
  • 1. What are the common applications of a single rectifier diode?

    They are commonly used in power circuits, chargers, AC to DC converters, motor drives, circuit protection, and other electronic devices to convert AC power to DC power or protect circuits from reverse current.

  • 2. What is the difference between Schottky diodes and traditional silicon rectifier diodes?

    Schottky diodes have a lower forward voltage drop (typically 0.2V to 0.3V) and faster switching speed, making them suitable for high-frequency applications. However, their reverse voltage is relatively low and is typically used in circuits with lower voltages.

  • 3. Can a single rectifier diode be used for high-frequency applications?

    Traditional silicon rectifier diodes are not suitable for high-frequency applications because their reverse recovery time is relatively long. For high-frequency applications, fast recovery diodes or Schottky diodes are typically used to reduce switching losses and improve efficiency.

  • 4. What is the reverse recovery time of a rectifier diode?

    Reverse recovery time refers to the time required for a diode to transition from a forward conducting state to a reverse blocking state. A shorter reverse recovery time is particularly important in high-frequency applications to reduce power loss.

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