AU2PG-M3/86A vs SK82C M6G
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| Category | Diodes - Rectifiers - Single | Diodes - Rectifiers - Single |
| Manufacturer | Vishay Semiconductor - Diodes Division | Taiwan Semiconductor Corporation |
| Description | DIODE AVALANCHE 400V 1.6A TO277A | DIODE SCHOTTKY 20V 8A DO214AB |
| Package | Tape & Reel (TR) | Tape & Reel (TR) |
| Series | eSMP® | - |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | TO-277, 3-PowerDFN | DO-214AB, SMC |
| Supplier Device Package | TO-277A (SMPC) | DO-214AB (SMC) |
| Diode Type | Avalanche | Schottky |
| Current - Average Rectified (Io) | 1.6A (DC) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 1.9 V @ 2 A | 550 mV @ 8 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 400 V | 500 µA @ 20 V |
| Capacitance @ Vr, F | 42pF @ 4V, 1MHz | - |
| Voltage - DC Reverse (Vr) (Max) | 400 V | 20 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75 ns | - |
| Operating Temperature - Junction | -55°C ~ 175°C | -55°C ~ 125°C |
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1. What are the common applications of a single rectifier diode?
They are commonly used in power circuits, chargers, AC to DC converters, motor drives, circuit protection, and other electronic devices to convert AC power to DC power or protect circuits from reverse current.
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2. What is the maximum reverse voltage (PIV) of a rectifier diode?
The Peak Inverse Voltage (PIV) is the maximum reverse voltage that a diode can withstand. When selecting a diode, the PIV must be higher than the maximum reverse voltage in the circuit, usually twice or more the input voltage.
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3. What is the difference between Schottky diodes and traditional silicon rectifier diodes?
Schottky diodes have a lower forward voltage drop (typically 0.2V to 0.3V) and faster switching speed, making them suitable for high-frequency applications. However, their reverse voltage is relatively low and is typically used in circuits with lower voltages.
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4. What is the reverse recovery time of a rectifier diode?
Reverse recovery time refers to the time required for a diode to transition from a forward conducting state to a reverse blocking state. A shorter reverse recovery time is particularly important in high-frequency applications to reduce power loss.
