ES2B/1 vs ES2D/1

Part Number
ES2B/1
ES2D/1
Category Diodes - Rectifiers - Single Diodes - Rectifiers - Single
Manufacturer Vishay Semiconductor - Diodes Division Vishay Semiconductor - Diodes Division
Description DIODE GEN PURP 100V 2A DO214AA DIODE GEN PURP 200V 2A DO214AA
Package Tape & Reel (TR) Tape & Reel (TR)
Series - -
Mounting Type Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB
Supplier Device Package DO-214AA (SMB) DO-214AA (SMB)
Diode Type Standard Standard
Current - Average Rectified (Io) 2A 2A
Voltage - Forward (Vf) (Max) @ If 900 mV @ 2 A 900 mV @ 2 A
Current - Reverse Leakage @ Vr 10 µA @ 100 V 10 µA @ 200 V
Capacitance @ Vr, F 18pF @ 4V, 1MHz -
Voltage - DC Reverse (Vr) (Max) 100 V 200 V
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 30 ns
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C
  • 1. What is forward voltage drop?

    Forward voltage drop refers to the voltage drop generated when the current passes through a diode when it is conducting. The forward voltage drop of silicon rectifier diodes is usually around 0.7V, while the forward voltage drop of Schottky diodes is usually lower, between 0.2V and 0.3V.

  • 2. What is a fast recovery diode?

    Fast recovery diode is a special type of rectifier diode with a short reverse recovery time, suitable for high-frequency power supplies and switch mode power supplies (SMPS) applications, reducing switching losses.

  • 3. How to determine if the rectifier diode is damaged?

    Use a multimeter to measure the forward and reverse resistance of a diode. If the diode exhibits low impedance or high impedance in both directions, it may have been damaged. Under normal circumstances, there should be low impedance when conducting in the forward direction, and high impedance when conducting in the reverse direction.

  • 4. How to improve the efficiency of rectifier diodes?

    The use of Schottky diodes or fast recovery diodes can reduce forward voltage drop and reverse recovery time, thereby improving the efficiency of rectifier circuits, especially in high-frequency applications.

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