FQP19N20 vs TK32E12N1,S1X
| Part Number |
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| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
| Manufacturer | ON Semiconductor | Toshiba Semiconductor and Storage |
| Description | MOSFET N-CH 200V 19.4A TO220-3 | MOSFET N CH 120V 60A TO-220 |
| Package | Tube | Bulk |
| Series | QFET® | U-MOSVIII-H |
| Operating Temperature | -55°C ~ 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Supplier Device Package | TO-220-3 | TO-220 |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Power Dissipation (Max) | 140W (Tc) | 98W (Tc) |
| FET Type | N-Channel | N-Channel |
| FET Feature | - | - |
| Drain to Source Voltage (Vdss) | 200 V | 120 V |
| Current - Continuous Drain (Id) @ 25°C | 19.4A (Tc) | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 9.7A, 10V | 13.8mOhm @ 16A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA | 4V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V | 2000 pF @ 60 V |
| Vgs (Max) | ±30V | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
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1. What is the difference between a MOSFET and a transistor?
Transistors are usually bipolar (BJT) and rely on current control, while MOSFETs are voltage controlled.
BJTs have a higher input impedance, but MOSFETs usually have a higher input impedance.
MOSFETs are better suited for high-frequency operation because they switch faster. -
2. What role does a MOSFET play in a motor?
MOSFETs are often used for functions such as speed control, direction control, and soft start/stop of motors. They can respond quickly to control signals and provide precise current control.
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3. What are the 4 types of MOSFETs?
N-channel enhancement type.
N-channel depletion type.
P-channel enhancement type.
P-channel depletion type. -
4. Is MOSFET 3-terminal or 4-terminal?
Basically, MOSFET is a three-terminal device (source S, drain D, and gate G). But in some cases, such as some high-voltage and high-power MOSFETs, there may be additional terminals (for example, substrate terminal B) to improve performance or reliability, so it is sometimes called a four-terminal device.
